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The Resource Toward Quantum FinFET, edited by Weihua Han, Zhiming M. Wang, (electronic resource)

Toward Quantum FinFET, edited by Weihua Han, Zhiming M. Wang, (electronic resource)

Label
Toward Quantum FinFET
Title
Toward Quantum FinFET
Statement of responsibility
edited by Weihua Han, Zhiming M. Wang
Creator
Contributor
Editor
Subject
Language
eng
Summary
This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a  roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices
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Is part of
Image bit depth
0
Literary form
non fiction
Series statement
Lecture Notes in Nanoscale Science and Technology,
Series volume
17
Toward Quantum FinFET, edited by Weihua Han, Zhiming M. Wang, (electronic resource)
Label
Toward Quantum FinFET, edited by Weihua Han, Zhiming M. Wang, (electronic resource)
Link
http://libproxy.rpi.edu/login?url=http://dx.doi.org/10.1007/978-3-319-02021-1
Publication
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Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
http://library.link/vocab/cover_art
https://contentcafe2.btol.com/ContentCafe/Jacket.aspx?Return=1&Type=S&Value=9783319020211&userID=ebsco-test&password=ebsco-test
Dimensions
unknown
http://library.link/vocab/discovery_link
{'f': 'http://opac.lib.rpi.edu/record=b3455197'}
Extent
XI, 363 p. 235 illus., 168 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9783319020211
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote

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