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The Resource Quaternary Capped in(Ga)As/GaAs Quantum Dot Infrared Photodetectors : From Materials to Devices

Quaternary Capped in(Ga)As/GaAs Quantum Dot Infrared Photodetectors : From Materials to Devices

Label
Quaternary Capped in(Ga)As/GaAs Quantum Dot Infrared Photodetectors : From Materials to Devices
Title
Quaternary Capped in(Ga)As/GaAs Quantum Dot Infrared Photodetectors
Title remainder
From Materials to Devices
Creator
Contributor
Subject
Language
eng
Cataloging source
MiAaPQ
Literary form
non fiction
Nature of contents
dictionaries
Quaternary Capped in(Ga)As/GaAs Quantum Dot Infrared Photodetectors : From Materials to Devices
Label
Quaternary Capped in(Ga)As/GaAs Quantum Dot Infrared Photodetectors : From Materials to Devices
Link
http://libproxy.rpi.edu/login?url=https://ebookcentral.proquest.com/lib/rpi/detail.action?docID=5024551
Publication
Copyright
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Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
  • Preface -- Contents -- Abbreviations -- List of Figures -- List of Tables -- Chapter 1: Introduction -- 1.1 Quantum Dots and Their Properties -- 1.1.1 Advantages of QDs -- 1.2 Quantum-Dot Growth -- 1.3 Quantum-Dot Infrared Photodetectors -- 1.4 Different QDIP Heterostructures -- 1.5 Background of the Present Study -- 1.6 Application of the Present Study -- 1.7 Summary -- References -- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots -- 2.1 Introduction -- 2.2 Sample Growth -- 2.3 Structural Characterization -- 2.3.1 XTEM Analysis of Different Heterostructures -- 2.3.2 HRXRD Characterization and Strain Calculations -- 2.3.3 AFM Characterization -- 2.4 Optical Characterization -- 2.4.1 Photoluminescence Properties -- 2.4.2 Raman Spectroscopy -- 2.5 Conclusions -- References -- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties -- 3.1 Introduction -- 3.2 Significance of Post-growth Annealing (RTA) Study -- 3.3 Experimental Details -- 3.3.1 Sample Growth -- 3.3.2 Annealing Experiments -- 3.4 Effect of RTA on QD Emission Properties -- 3.4.1 Activation Energy of Multilayer Sample -- 3.5 Conclusions -- References -- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetectors (QDIPs) with Quaternary Capping -- 4.1 Introduction -- 4.2 Growth, Fabrication and Characterization of Two-{u00AD}Colour Un-coupled QDIP -- 4.2.1 Sample Growth and Material Characterization -- 4.2.2 QDIP Fabrication -- 4.2.3 QDIP Characterization -- 4.2.3.1 Dark Current -- 4.2.3.2 Photoresponse -- 4.2.3.3 Detectivity (D*) -- 4.3 Comparison of In(Ga)As/GaAs QD Effects in Confinement -- 4.4 Multicolour InAs/GaAs QDIPs -- 4.4.1 Introduction -- 4.4.2 Sample Growth -- 4.4.3 Device Characterization -- 4.5 Conclusion -- References -- Chapter 5: Effects of RTA on Quaternary Capped QDIP Characteristics -- 5.1 Introduction
  • 5.2 Effect of RTA on 35 Layer Uncoupled QDIP Characteristics -- 5.2.1 Sample Growth -- 5.3 Structural and Optical Characterization -- 5.3.1 XTEM Analysis -- 5.3.2 Photoluminescence Spectra -- 5.3.3 XRD Rocking-Curve Analysis -- 5.4 Device Characterization -- 5.4.1 Spectral Response -- 5.4.2 Responsivity and Detectivity -- 5.5 Conclusion -- References -- Chapter 6: Summary and Future Work -- Index
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unknown
http://library.link/vocab/discovery_link
{'f': 'http://opac.lib.rpi.edu/record=b4389016'}
Extent
1 online resource (72 pages)
Form of item
online
Isbn
9789811052903
Media category
computer
Media MARC source
rdamedia
Media type code
c
Sound
unknown sound
Specific material designation
remote

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