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The Resource Process and device simulation for MOS-VLSI circuits, edited by Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, William G. Oldham

Process and device simulation for MOS-VLSI circuits, edited by Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, William G. Oldham

Label
Process and device simulation for MOS-VLSI circuits
Title
Process and device simulation for MOS-VLSI circuits
Statement of responsibility
edited by Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, William G. Oldham
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Process and device simulation for MOS-VLSI circuits, edited by Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, William G. Oldham
Label
Process and device simulation for MOS-VLSI circuits, edited by Paolo Antognetti, Dimitri A. Antoniadis, Robert W. Dutton, William G. Oldham
Publication
Note
  • 'Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, SOGESTA, Urbino, Italy, July 12-23, 1982'--T.p. verso
  • 'Published in cooperation with NATO Scientific Affairs Division.'
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Bibliography note
Includes bibliographical references
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Dimensions
24 cm.
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{'f': 'http://opac.lib.rpi.edu/record=b1102829'}
Extent
xii, 619 p.
Isbn
9789024728244
Isbn Type
(Netherlands)
Lccn
83-4018
Other physical details
ill.

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