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The Resource Piezoresistive Effect of p-Type Single Crystalline 3C-SiC : Silicon Carbide Mechanical Sensors for Harsh Environments, by Hoang-Phuong Phan, (electronic resource)

Piezoresistive Effect of p-Type Single Crystalline 3C-SiC : Silicon Carbide Mechanical Sensors for Harsh Environments, by Hoang-Phuong Phan, (electronic resource)

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Piezoresistive Effect of p-Type Single Crystalline 3C-SiC : Silicon Carbide Mechanical Sensors for Harsh Environments
Title
Piezoresistive Effect of p-Type Single Crystalline 3C-SiC
Title remainder
Silicon Carbide Mechanical Sensors for Harsh Environments
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by Hoang-Phuong Phan
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Language
eng
Summary
This book addresses the piezoresistance in p-type 3C-SiC, which it investigates using experimental characterization and theoretical analysis. The gauge factor, the piezoresistive coefficients in two-terminal and four-terminal resistors, the comparison between single crystalline and nanocrystalline SiC, along with the temperature dependence of the piezoresistive effect in p-type 3C-SiC are also discussed. Silicon carbide (SiC) is an excellent material for electronic devices operating at high temperatures, thanks to its large energy band gap, superior mechanical properties and extreme chemical inertness. Among the numerous poly types of SiC, the cubic single crystal, which is also well known as 3C-SiC, is the most promising platform for microelectromechanical (MEMS) applications, as it can be epitaxially grown on an Si substrate with diameters of up to several hundred millimeters. This feature makes 3C-SiC compatible with the conventional Si-based micro/nano processing and also cuts down the cost of SiC wafers. The investigation into the piezoresistive effect in 3CSiC is of significant interest for the development of mechanical transducers such as pressure sensors and strain sensors used for controlling combustion and deep well drilling. Although a number of studies have focused on the piezoresistive effect in n-type 3C-SiC, 4H-SiC and 6H-SiC, comparatively little attention has been paid to piezoresistance in p-type 3C-SiC. In addition, the book investigates the piezoresistive effect of top-down fabricated SiC nanowires, revealing a high degree of sensitivity in nanowires employing an innovative nano strain-amplifier. The large gauge factors of the p-type 3C-SiC at both room temperature and high temperatures found here indicate that this poly type could be suitable for the development of mechanical sensing devices operating in harsh environments with high temperatures.iv>
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non fiction
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Springer Theses, Recognizing Outstanding Ph.D. Research,
Piezoresistive Effect of p-Type Single Crystalline 3C-SiC : Silicon Carbide Mechanical Sensors for Harsh Environments, by Hoang-Phuong Phan, (electronic resource)
Label
Piezoresistive Effect of p-Type Single Crystalline 3C-SiC : Silicon Carbide Mechanical Sensors for Harsh Environments, by Hoang-Phuong Phan, (electronic resource)
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http://libproxy.rpi.edu/login?url=http://dx.doi.org/10.1007/978-3-319-55544-7
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mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
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not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Introduction and Literature Review -- Theory of the Piezoresistive E{uFB00}ect in p-type 3C-Sic -- 3C-Sic Film Growth and Sample Preparation -- Characterization of the Piezoresistive E{uFB00}ect in p-type Single Crystalline 3C-Sic -- The Piezoresistive E{uFB00}ect in p-type Nanocrystalline Sic -- The Piezoresistive E{uFB00}ect of Top Down p-type 3C-Sic Nanowires -- Conclusion and Future Work
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{'f': 'http://opac.lib.rpi.edu/record=b4258471'}
Extent
XXI, 146 p. 94 illus., 3 illus. in color.
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multiple file formats
Form of item
electronic
Isbn
9783319555447
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uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
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online resource.
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remote

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