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The Resource Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, edited by Osamu Ueda, Stephen J. Pearton, (electronic resource)

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, edited by Osamu Ueda, Stephen J. Pearton, (electronic resource)

Label
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
Title
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
Statement of responsibility
edited by Osamu Ueda, Stephen J. Pearton
Contributor
Editor
Subject
Language
eng
Summary
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability.  Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms. Provides the first handbook to cover all aspects of compound semiconductor device reliability Systematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000 Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devices Includes experimental approaches in reliability studies Presents case studies of laser degradation and HEMT degradation
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Literary form
non fiction
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, edited by Osamu Ueda, Stephen J. Pearton, (electronic resource)
Label
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, edited by Osamu Ueda, Stephen J. Pearton, (electronic resource)
Link
http://libproxy.rpi.edu/login?url=http://dx.doi.org/10.1007/978-1-4614-4337-7
Publication
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Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Preface -- Part 1. Materials Issues and Reliability of Optical Devices -- 1. Reliability Testing of Semiconductor Optical Devices -- 2. Failure Analysis of Semiconductor Optical Devices -- 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication -- 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation -- 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes -- 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers -- 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes -- 8. InGaN Laser Diode Degradation -- 9. Radiation-enhanced Dislocation Glide - The Current Status of Research -- 10. Mechanism of Defect Reactions in Semiconductors -- Part 2. Materials Issues and Reliability of Electron Devices -- 11. Reliability Studies in the Real World -- 12. Strain Effects in AlGaN/GaN HEMTs -- 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors -- 14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors -- 15. Novel Dielectrics for GaN Device Passivation And Improved Reliability -- 16. Reliability Simulation -- 17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy -- 18. Reliability Study of InP-Based HBTs Operating at High Current Density -- Index
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{'f': 'http://opac.lib.rpi.edu/record=b3387977'}
Extent
XVI, 616 p.
File format
multiple file formats
Form of item
electronic
Isbn
9781461443377
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
online resource.
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absent
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access
Specific material designation
remote

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