Coverart for item
The Resource Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects, edited by Gérard Barbottin and André Vapaille

Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects, edited by Gérard Barbottin and André Vapaille

Label
Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects
Title
Instabilities in silicon devices
Title number
Volume 3
Title part
New insulators, devices and radiation effects
Statement of responsibility
edited by Gérard Barbottin and André Vapaille
Title variation
New insulators, devices and radiation effects
Contributor
Editor
Subject
Language
eng
Summary
Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them
Cataloging source
OPELS
Illustrations
  • illustrations
  • portraits
Index
index present
Language note
English text with abstracts in French and German
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects, edited by Gérard Barbottin and André Vapaille
Label
Instabilities in silicon devices, Volume 3, New insulators, devices and radiation effects, edited by Gérard Barbottin and André Vapaille
Link
http://libproxy.rpi.edu/login?url=http://www.sciencedirect.com/science/bookseries/18745903/3
Publication
Related Contributor
Related Authorities
Related Subjects
Bibliography note
Includes bibliographical references and indexes
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
txt
Content type MARC source
rdacontent
http://library.link/vocab/cover_art
https://contentcafe2.btol.com/ContentCafe/Jacket.aspx?Return=1&Type=S&Value=9781281058102&userID=ebsco-test&password=ebsco-test
Dimensions
unknown
http://library.link/vocab/discovery_link
{'f': 'http://opac.lib.rpi.edu/record=b4169912'}
Extent
1 online resource (xxvii, 933 pages)
Form of item
online
Isbn
9781281058102
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
illustrations, portraits
Specific material designation
remote

Library Locations

    • Folsom LibraryBorrow it
      110 8th St, Troy, NY, 12180, US
      42.729766 -73.682577
Processing Feedback ...