Coverart for item
The Resource Impact of Ion Implantation on Quantum Dot Heterostructures and Devices, by Arjun Mandal, Subhananda Chakrabarti, (electronic resource)

Impact of Ion Implantation on Quantum Dot Heterostructures and Devices, by Arjun Mandal, Subhananda Chakrabarti, (electronic resource)

Label
Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
Title
Impact of Ion Implantation on Quantum Dot Heterostructures and Devices
Statement of responsibility
by Arjun Mandal, Subhananda Chakrabarti
Creator
Contributor
Author
Subject
Language
eng
Summary
This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices
Is part of
Image bit depth
0
Literary form
non fiction
Impact of Ion Implantation on Quantum Dot Heterostructures and Devices, by Arjun Mandal, Subhananda Chakrabarti, (electronic resource)
Label
Impact of Ion Implantation on Quantum Dot Heterostructures and Devices, by Arjun Mandal, Subhananda Chakrabarti, (electronic resource)
Link
http://libproxy.rpi.edu/login?url=http://dx.doi.org/10.1007/978-981-10-4334-5
Publication
Related Contributor
Related Location
Related Agents
Related Authorities
Related Subjects
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Preface -- Acknowledgement -- Contents -- List of Figures -- List of Tables -- Abbreviations -- Chapter 1: Introduction to Quantum Dots -- Chapter 2: Low energy ion implantation over single layer InAs/GaAs quantum dots -- Chapter 3: Optimizations for quaternary alloy (InAlGaAs) capped InAs/GaAs multilayer quantum dots -- Chapter 4: Effects of low energy light ion (H{u2212}) implantations on quaternary-alloy-capped InAs/GaAs quantum dot infrared photodetectors -- Chapter 5: Effects of low energy light ion (H{u2212}) implantation on quaternary-alloy-capped InGaAs/GaAs quantum dot infrared photodetectors
http://library.link/vocab/cover_art
https://contentcafe2.btol.com/ContentCafe/Jacket.aspx?Return=1&Type=S&Value=9789811043345&userID=ebsco-test&password=ebsco-test
Dimensions
unknown
http://library.link/vocab/discovery_link
{'f': 'http://opac.lib.rpi.edu/record=b4258574'}
Extent
XXIII, 64 p. 53 illus., 32 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9789811043345
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote

Library Locations

    • Folsom LibraryBorrow it
      110 8th St, Troy, NY, 12180, US
      42.729766 -73.682577
Processing Feedback ...