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The Resource High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)

High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)

Label
High-k gate dielectrics for CMOS technology
Title
High-k gate dielectrics for CMOS technology
Statement of responsibility
edited by Gang He and Zhaoqi Sun
Contributor
Subject
Language
eng
Cataloging source
MiAaPQ
Illustrations
illustrations
Index
index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)
Label
High-k gate dielectrics for CMOS technology, edited by Gang He and Zhaoqi Sun, (electronic resource)
Link
http://libproxy.rpi.edu/login?url=https://ebookcentral.proquest.com/lib/connectny/detail.action?docID=956000
Publication
Related Contributor
Related Location
Related Agents
Related Authorities
Related Subjects
Bibliography note
Includes bibliographical references and index
Color
multicolored
Contents
pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions
Dimensions
unknown
http://library.link/vocab/discovery_link
{'f': 'http://opac.lib.rpi.edu/record=b4050479'}
Extent
xxxi, 558 p.
Form of item
  • online
  • electronic
Other physical details
ill. (some col.)
Reproduction note
Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
Specific material designation
remote

Library Locations

    • Folsom LibraryBorrow it
      110 8th St, Troy, NY, 12180, US
      42.729766 -73.682577
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