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The Resource Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets, by María Ángela Pampillón Arce, (electronic resource)

Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets, by María Ángela Pampillón Arce, (electronic resource)

Label
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
Title
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
Statement of responsibility
by María Ángela Pampillón Arce
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Language
eng
Summary
This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets. It demonstrates the possibility of depositing high permittivity materials (GdScO3) by means of high pressure sputtering from metallic targets using in situ plasma oxidation on Si and indium phosphate (InP) substrates. The advantage of this system is the high working pressure, which causes the particles to undergo multiple collisions and become thermalized before reaching the substrate in a pure diffusion process, thus protecting the semiconductor surface from damage. This work presents a unique fabrication using metallic targets and involving a two-step deposition process: a thin metallic film is sputtered in an Ar atmosphere and this film is then plasma oxidized in situ. It also demonstrates the fabrication of GdScO3 on Si with a permittivity value above 30 from metallic Gd and Sc targets. Since co-sputtering was not possible, a nanolaminate of these materials was deposited and annealed. The electrical properties of these devices show that the material is highly interesting from a microelectronic integration standpoint
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Literary form
non fiction
Series statement
Springer Theses, Recognizing Outstanding Ph.D. Research,
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets, by María Ángela Pampillón Arce, (electronic resource)
Label
Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets, by María Ángela Pampillón Arce, (electronic resource)
Link
http://libproxy.rpi.edu/login?url=http://dx.doi.org/10.1007/978-3-319-66607-5
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Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Introduction -- Fabrication Techniques -- Characterization Techniques -- Thermal Oxidation of Gd2o3 -- Plasma Oxidation of Gd2o3 and Sc2o3 -- Gadolinium Scandate -- Interface Scavenging -- Gd2o3 on Inp Substrates -- Conclusions and Future Work
http://library.link/vocab/cover_art
https://contentcafe2.btol.com/ContentCafe/Jacket.aspx?Return=1&Type=S&Value=9783319666075&userID=ebsco-test&password=ebsco-test
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unknown
http://library.link/vocab/discovery_link
{'f': 'http://opac.lib.rpi.edu/record=b4379965'}
Extent
XXIII, 164 p. 116 illus., 6 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9783319666075
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote

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