Coverart for item
The Resource GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients, by Henning Döscher, (electronic resource)

GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients, by Henning Döscher, (electronic resource)

Label
GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
Title
GaP Heteroepitaxy on Si(100)
Title remainder
Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients
Statement of responsibility
by Henning Döscher
Creator
Contributor
Author
Subject
Language
eng
Summary
Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration
Member of
Is part of
Image bit depth
0
Literary form
non fiction
Series statement
Springer Theses, Recognizing Outstanding Ph.D. Research,
GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients, by Henning Döscher, (electronic resource)
Label
GaP Heteroepitaxy on Si(100) : Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients, by Henning Döscher, (electronic resource)
Link
http://libproxy.rpi.edu/login?url=http://dx.doi.org/10.1007/978-3-319-02880-4
Publication
Related Contributor
Related Location
Related Agents
Related Authorities
Related Subjects
Related Items
Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Introduction -- Experimental -- Si(100) surfaces in chemical vapor environments -- GaP(100) and InP(100) surfaces -- GaP growth on Si(100) and anti-phase disorder -- Conclusion
http://library.link/vocab/cover_art
https://contentcafe2.btol.com/ContentCafe/Jacket.aspx?Return=1&Type=S&Value=9783319028804&userID=ebsco-test&password=ebsco-test
Dimensions
unknown
http://library.link/vocab/discovery_link
{'f': 'http://opac.lib.rpi.edu/record=b3455198'}
Extent
XIV, 143 p. 80 illus., 33 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9783319028804
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote

Library Locations

    • Folsom LibraryBorrow it
      110 8th St, Troy, NY, 12180, US
      42.729766 -73.682577
Processing Feedback ...