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The Resource Epitaxy of Semiconductors : Introduction to Physical Principles, by Udo W. Pohl, (electronic resource)

Epitaxy of Semiconductors : Introduction to Physical Principles, by Udo W. Pohl, (electronic resource)

Label
Epitaxy of Semiconductors : Introduction to Physical Principles
Title
Epitaxy of Semiconductors
Title remainder
Introduction to Physical Principles
Statement of responsibility
by Udo W. Pohl
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Contributor
Author
Subject
Language
eng
Summary
Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations
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0
Literary form
non fiction
Series statement
Graduate Texts in Physics,
Epitaxy of Semiconductors : Introduction to Physical Principles, by Udo W. Pohl, (electronic resource)
Label
Epitaxy of Semiconductors : Introduction to Physical Principles, by Udo W. Pohl, (electronic resource)
Link
http://libproxy.rpi.edu/login?url=http://dx.doi.org/10.1007/978-3-642-32970-8
Publication
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Antecedent source
mixed
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
not applicable
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Epitaxy -- Structural Properties of Heterostructures -- Electronic Properties of Heterostructures -- Thermodynamics of Epitaxial Layer-Growth -- Atomistic Aspects of Epitaxial Layer Growth -- Doping, Diffusion, and Contacts -- Methods of Epitaxy
http://library.link/vocab/cover_art
https://contentcafe2.btol.com/ContentCafe/Jacket.aspx?Return=1&Type=S&Value=9783642329708&userID=ebsco-test&password=ebsco-test
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unknown
http://library.link/vocab/discovery_link
{'f': 'http://opac.lib.rpi.edu/record=b3388066'}
Extent
XIV, 326 p. 213 illus., 57 illus. in color.
File format
multiple file formats
Form of item
electronic
Isbn
9783642329708
Level of compression
uncompressed
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
online resource.
Quality assurance targets
absent
Reformatting quality
access
Specific material designation
remote

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